DocumentCode
880459
Title
Effect of randomness in the distribution of impurity ions on FET thresholds in integrated electronics
Author
Keyes, Robert W.
Volume
10
Issue
4
fYear
1975
fDate
8/1/1975 12:00:00 AM
Firstpage
245
Lastpage
247
Abstract
A model of the effect of random fluctuations in the number of impurity atoms in the depletion layer of a field-effect transistor (FET) is presented and analyzed. It is conducted that the range of space charge per unit area that must be anticipated on a chip containing N FET´s each of area A is ΔS=q(2 ln N)/SUP 1/2/A/SUP -1/4/n~/SUP 1/2/. n~ is the doping level of the substrate.
Keywords
Field effect transistors; Monolithic integrated circuits; field effect transistors; monolithic integrated circuits; Atomic layer deposition; Doping; Electric breakdown; Electrodes; FETs; Fluctuations; Impurities; Space charge; Threshold voltage; Transistors;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1975.1050600
Filename
1050600
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