Title :
Properties of ion-implanted high-power angled-grating distributed-feedback lasers
Author :
Paschke, Katrin ; Bogatov, Alexander ; Bugge, Frank ; Drakin, Alexander E. ; Fricke, Jörg ; Güther, Reiner ; Stratonnikov, Alexey A. ; Wenzel, Hans ; Erbert, Götz ; Tränkle, Günther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
Abstract :
An improvement of the linearity of the light-current characteristics and the beam quality of high-power α-distributed feedback lasers is achieved by an ion implantation of the regions outside the contact stripe. The linear part of the light-current characteristics of 4-mm-long devices emitting at 1060 nm is extended to P=1.8 W output power. The times-diffraction-limit factor M2 remains constant, equal to 1.7 over the whole power range. Simulations of the electro-optical behavior reveal that the improvement is achieved by a suppression of optical field components which propagate inside the cavity perpendicular to the facets.
Keywords :
Bragg gratings; distributed feedback lasers; electro-optical effects; ion implantation; laser beams; laser cavity resonators; laser theory; quantum well lasers; semiconductor device models; α-distributed feedback lasers; 1.8 W; 1060 nm; 4 mm; angled-grating distributed-feedback lasers; beam quality; cavity propagation; contact stripe; electro-optical behavior; high-power distributed-feedback lasers; ion implantation; ion-implanted distributed-feedback lasers; light-current characteristics; optical field component suppression; slanted Bragg grating; times-diffraction-limit factor; Distributed feedback devices; Ion implantation; Laser beams; Laser feedback; Linearity; Optical devices; Optical feedback; Optical propagation; Power generation; Stimulated emission;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2003.820915
