Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators

Author

Skogen, Erik J. ; Raring, James W. ; Barton, Jonathon S. ; DenBaars, Steven P. ; Coldren, Larry A.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

9

Issue

5

fYear

2003

Firstpage

1183

Lastpage

1190

Abstract

We describe a quantum-well intermixing process for the monolithic integration of various devices, each with a unique band edge. The process involves a single ion implant followed by multiple etch and anneal cycles. We have applied this method to design and fabricate widely tunable sampled-grating distributed Bragg reflector lasers with integrated electroabsorption modulators. The devices employ three unique band edges, and demonstrate exceptional tuning, gain, and absorption characteristics.

Keywords

annealing; distributed Bragg reflector lasers; electro-optical modulation; electroabsorption; etching; integrated optoelectronics; ion implantation; laser tuning; optical communication equipment; optical fabrication; quantum well devices; semiconductor lasers; wavelength division multiplexing; absorption characteristics; anneal cycles; electroabsorption modulators; gain; ion implantation; monolithic integration; multiple etch cycles; postgrowth control; quantum-well band edge; quantum-well intermixing; sampled-grating distributed Bragg reflector lasers; single ion implant; tuning; wavelength division multiplexing; widely tunable lasers; Annealing; Design methodology; Etching; Implants; Laser tuning; Monolithic integrated circuits; Optical control; Optical design; Quantum well lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2003.819491

Filename

1263949