Activation Energies of Oxide Charge Recovery in SOS or SOI Structures after an Ionizing Pulse

MOS transistors in either SOS technology with oxidation temperature varations or laser-recrystallized SOI have been exposed to ionizing pulse in order to derive activation energy of oxide charge recovery. It is found a direct dependence of annealing activation energy on oxidation or on highest temperature, and on electric field. In case of SOI, substrate oxide must also be considered. Models are discussed, based on an exponential distribution of states above the valence band and/or on polaron effect.