High-power high-efficiency 660-nm laser diodes for DVD-R/RW

Author

Yagi, Tetsuya ; Nishiguchi, Harumi ; Yoshida, Yasuaki ; Miyashita, Motoharu ; Sasaki, Motoko ; Sakamoto, Yoshifumi ; Ono, Ken-ichi ; Mitsui, Yasuo

Author_Institution

High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

9

Issue

5

fYear

2003

Firstpage

1260

Lastpage

1264

Abstract

A kink mechanism in 660-nm laser diodes (LDs) has been studied experimentally. The experiments revealed that the main origin of the kink is a refractive index change due to heat generation in the stripe portion, and the kink power can be increased by improving the temperature characteristics of the LD. A newly developed LD, based on this result, shows stable lateral mode operation up to 190 mW at 80°C. This is the highest power recorded among narrow stripe LDs with a wavelength of 660 nm. This LD is suitable for the next generation of high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LDs.

Keywords

III-V semiconductors; aluminium compounds; digital versatile discs; gallium compounds; indium compounds; laser modes; refractive index; semiconductor lasers; 140 mW; 140 mW class LDs; 660 nm; 660-nm laser diodes; 80 degC; AlGaInP; heat generation; high-efficiency laser diodes; high-power laser diodes; high-speed DVD-R/RW drives; kink mechanism; kink power; recordable optical disk system; refractive index change; rewritable optical disk system; stable lateral mode operation; stripe portion; Character generation; Diode lasers; Optical losses; Optical refraction; Optical saturation; Optical variables control; Optical waveguides; Power generation; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2003.819514

Filename

1263960