DocumentCode :
881161
Title :
Nuclear Radiation Response of Intel 64k-Bit and 128k-Bit HMOS Ultraviolet Erasable Programmable Read Only Memories (UVEPROMs)
Author :
Rensner, Gary D. ; Eckhardt, David A. ; Page, Michael
Author_Institution :
Booz.Allen & Hamilton Inc. 2309 Renard P1. SE Suite 301 Albuquerque, NM 87106
Volume :
32
Issue :
6
fYear :
1985
Firstpage :
4056
Lastpage :
4060
Abstract :
The design of hardware for military systems often includes requirements to withstand strategic or tactical nuclear environments. Hardening analyses are partly based on facts obtained from nuclear radiation tests on circuit devices. This paper presents the results of experiments conducted to investigate the functional responses of Intel 2764 and 27128 ultraviolet erasable programmable read only memories (UVEPROMs) after exposure to neutron fluence and gamma dose rate environments. Each device was evaluated for permanent device damage and for memory bit failure. An estimate of the total radiation dose was also obtained using the test data.
Keywords :
Application software; Circuit testing; EPROM; Electrons; Gamma rays; Hardware; Ionizing radiation; Neutrons; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334068
Filename :
4334068
Link To Document :
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