DocumentCode :
881220
Title :
New analysis of f.e.t. saturation
Author :
Luque, Antonio
Volume :
5
Issue :
17
fYear :
1969
Firstpage :
420
Lastpage :
422
Abstract :
A new study of the saturation phenomenon of a junction, f.e.t. including the rise of voltage outside the channel, is proposed. This study is based on an approximate solution of the bidimensional Poisson equation with appropriate boundary conditions. Experimental evidence is also presented.
Keywords :
field effect transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690317
Filename :
4210537
Link To Document :
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