DocumentCode :
881378
Title :
Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAM
Author :
Zoutendyk, J.A. ; Smith, L.S. ; Soli, G.A. ; Thieberger, P. ; Wegner, H.E.
Author_Institution :
Jet Propulsion Laboratory California Institute of Technology Pasadena, California 91109
Volume :
32
Issue :
6
fYear :
1985
Firstpage :
4164
Lastpage :
4169
Abstract :
Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and 0 ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.
Keywords :
Bipolar integrated circuits; Bipolar transistors; Integrated circuit modeling; Ion beams; Laboratories; Physics; Propulsion; Read-write memory; SPICE; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334087
Filename :
4334087
Link To Document :
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