Title :
Numerical analysis of a cylindrical thin-pillar transistor (CYNTHIA)
Author :
Miyano, Shinji ; Hirose, Mayumi ; Masuoka, Fujio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
8/1/1992 12:00:00 AM
Abstract :
The authors have analyzed the characteristics of a cylindrical thin-pillar transistor, (CYNTHIA), which is a vertical MOS transistor with a cylindrical gate electrode surrounding a submicrometer-diameter silicon pillar. The device characteristics are calculated by solving Poisson´s equation in cylindrical coordinates. Results showed that CYNTHIA has three superior features: excellent subthreshold characteristics, enhanced electron mobility, and increased sheet electron concentration. These superior characteristics result in a feature size twice that of vertical SOI transistors, The authors´ calculation is that CYNTHIA is quite an attractive device design for future ultra-high-density LSIs
Keywords :
carrier density; carrier mobility; insulated gate field effect transistors; numerical methods; semiconductor device models; CYNTHIA; Poisson´s equation; Si pillar; cylindrical coordinates; cylindrical gate electrode; cylindrical thin-pillar transistor; device design; electron mobility; feature size; numerical analysis; semiconductor; sheet electron concentration; subthreshold characteristics; ultra high density LSI; vertical MOS transistor; Associate members; Electrodes; Electron mobility; Impurities; MOSFETs; Numerical analysis; Poisson equations; Silicon; Testing; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
