DocumentCode
881389
Title
Charge-coupled device and charge-injection device imaging
Author
Barbe, David F.
Volume
11
Issue
1
fYear
1976
fDate
2/1/1976 12:00:00 AM
Firstpage
109
Lastpage
114
Abstract
A brief review is given of the advances in solid-state imaging during the last ten years. The issues of surface channel versus buried channel, aliasing versus prefiltering, frame transfer (FT) versus interline transfer (IT) versus charge-injection device (CID), and direct view versus EBIC imaging are discussed. Time-delay-and-integration (TDI) and infrared imaging are discussed. Finally applications are considered.
Keywords
Charge-coupled devices; Image sensors; Infrared imaging; Reviews; charge-coupled devices; image sensors; infrared imaging; reviews; Charge coupled devices; Clocks; Electron traps; Frequency; Infrared imaging; Optical arrays; Optical imaging; Semiconductor device noise; Semiconductor-insulator interfaces; Solid state circuits;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050684
Filename
1050684
Link To Document