DocumentCode

881397

Title

A physical explanation of secondary breakdown in transistors

Author

Lewis, E.T.

Author_Institution

Raytheon Company, Sudbury, Mass.

Volume

54

Issue

5

fYear

1966

fDate

5/1/1966 12:00:00 AM

Firstpage

788

Lastpage

789

Keywords

Degradation; Delay effects; Electric breakdown; Electrons; Laboratories; Physics; Space charge; Voltage;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/PROC.1966.4851

Filename

1446781