DocumentCode :
881414
Title :
Charge injection imaging: operating techniques and performances characteristics
Author :
Burke, Hubert K. ; Michon, Gerald J.
Volume :
11
Issue :
1
fYear :
1976
fDate :
2/1/1976 12:00:00 AM
Firstpage :
121
Lastpage :
128
Abstract :
The charge-injection device (CID) imaging technique employs intracell transfer and injection to sense photon-generated charge at each sensing site. Sites are addressed by an X-Y coincident-voltage technique that is not restricted to standard scanning. Free-format (random) site selection is possible. An epitaxial structure provides a buried collector to prevent recollection of the injected charge. In sequential injection, the charge is injected into the substrate and the resulting displacement current sensed. In parallel injection, the functions of signal charge detection and injection have been separated. The injection operation is used to reset (empty) the charge storage capacitors after line readout has been completed. Nondestructive readout (NDRO) is possible by deferring the injection operation. Low-loss NDRO operation has been achieved using a cooled imager.
Keywords :
Charge-coupled devices; Image sensors; Monolithic integrated circuits; charge-coupled devices; image sensors; monolithic integrated circuits; Biographies; Charge coupled devices; Electron devices; FETs; Helium; Insulation; Interface states; Metallization; Notice of Violation; Physics;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1976.1050686
Filename :
1050686
Link To Document :
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