Title :
Microwave noise characterisation of poly-emitter bipolar junction transistors
Author :
Deen, M.J. ; Ilowski, J.J.
Author_Institution :
Northern Telecom Ltd., Nepean, Ont., Canada
fDate :
4/15/1993 12:00:00 AM
Abstract :
The microwave noise characteristics of poly-emitter bipolar junction transistors have been evaluated in a 0.8 mu m silicon BiCMOS process, at frequencies between 1 and 5.6 GHz and for collector currents between 0.5 and 15 mA. Using a small-signal model for the poly-emitter bipolar junction transistors, very good agreement has been obtained between measurements and calculations of both noise figure (FMIN) against frequency, and FMIN against collector current. It is found that FMIN was 2.3 dB at 1 GHz and 8.3 dB at 5.6 GHz for a collector current of 5 mA.
Keywords :
BiCMOS integrated circuits; bipolar transistors; digital integrated circuits; equivalent circuits; semiconductor device models; semiconductor device noise; solid-state microwave devices; 0.5 to 15 mA; 0.8 micron; 1 to 5.6 GHz; BiCMOS process; bipolar junction transistors; collector current; high speed circuits; microwave noise characteristics; noise figure; poly-emitter; small-signal model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930453
