Series resistance of silicided ohmic contacts for nanoelectronics

Author

Chieh, Yuen-Shung ; Perera, Asanga H. ; Krusius, Peter J.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1882

Lastpage

1888

Abstract

The electrical behavior of shallow silicide-to-silicon ohmic contacts has been evaluated for lateral dimensions to 50 nm. Trench-isolated series resistance test structures were fabricated using TiSi₂ self-aligned contact technology. Resistance measurements have been performed as a function of contact size in the temperature range from 100 to 300 K and analyzed using multidimensional resistor ladder network models. Well-behaved small-volume ohmic contacts have been achieved. Large-area contact characteristics can be maintained to the smallest sizes. Multidimensional current flow has little effect on the measured resistances. Small lateral dimensional variations are responsible for the higher than predicted series resistance for the smallest sizes. The implications on nanoelectronic devices and circuits are quantified

Keywords

contact resistance; elemental semiconductors; ohmic contacts; semiconductor-metal boundaries; silicon; titanium compounds; 100 K to 300 K; Si-TiSi₂ contacts; contact size; multidimensional current flow; multidimensional resistor ladder network models; nanoelectronic circuits; nanoelectronic devices; resistance measurement; self-aligned contact technology; semiconductor; silicided ohmic contacts; trench isolated series resistance test structures; Automatic testing; Contact resistance; Electric resistance; Electrical resistance measurement; Multidimensional systems; Nanoelectronics; Ohmic contacts; Performance analysis; Performance evaluation; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144679

Filename

144679