DocumentCode
8816
Title
A Subthreshold-MOSFETs-Based Scattered Relative Temperature Sensor Front-End With a Non-Calibrated 
 voltage generator was first implemented to verify the low voltage operation capability and the mismatch-error correction. A low voltage reference circuit has been also designed and tested. A gate-bulk-driven error correction amplifier is proposed in order to minimize the offset error and maintain low voltage operation. The scattered relative temperature sensor front-end was then implemented in AMI 0.5 μm CMOS process with an array of 5 × 5 sensor nodes across the chip. The minimum supply voltage was measured as 1 V over -40-100°C with a typical N-JP-type threshold voltage of around 0.8 V and 0.9 V at room temperature, respectively. The measured relative inaccuracy was less than ±2.5°C without calibration. To the best of the authors´ knowledge, this is the first time that non-calibrated on-chip relative temperature monitoring accuracy is reported. Furthermore, the multi-location thermal monitoring function has been experimentally demonstrated and a 2°C/mm on-chip temperature gradient was detected.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>CMOS integrated circuits; MOSFET; low-power electronics; reference circuits; temperature sensors; AMI CMOS process; dynamic element matching; dynamic offset cancellation; gate-bulk-driven error correction amplifier; low supply voltage; low voltage reference circuit; mismatch-error correction; multilocation thermal monitoring function; noncalibrated relative inaccuracy; proportional-to-absolute-temperature voltage generator; size 0.5 mum; subthreshold-MOSFET-based scattered relative temperature sensor front-end; temperature 293 K to 298 K; temperature 40 degC to 100 degC; Error correction; Low voltage; MOSFET; Subthreshold current; Temperature sensors; Low voltage; multi-location thermal monitoring; subthreshold MOSFETs; temperature sensor;</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Circuits and Systems I: Regular Papers, IEEE Transactions on</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>1549-8328</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/TCSI.2013.2249131</div></div>
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A Subthreshold-MOSFETs-Based Scattered Relative Temperature Sensor Front-End With a Non-Calibrated