DocumentCode :
881884
Title :
A curve-fitted circuits model for bipolar transistor f/SUB T/ roll-off at high injection levels
Author :
Choma, John, Jr.
Volume :
11
Issue :
2
fYear :
1976
fDate :
4/1/1976 12:00:00 AM
Firstpage :
346
Lastpage :
348
Abstract :
This paper introduces a simple empirical relationship for modelling the common-emitter short-circuit gain-bandwidth product (f/SUB T/) of bipolar transistors operated in high-injection regimes. The model simulates the dependence of f/SUB T/ on both collector current and collector voltage to within an error of no more than 20 percent.
Keywords :
Bipolar transistors; Semiconductor device models; bipolar transistors; semiconductor device models; Bipolar transistors; Capacitance; Displays; Forward contracts; Power amplifiers; Solid modeling; Switching circuits; Tuned circuits; VHF circuits; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1976.1050729
Filename :
1050729
Link To Document :
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