Title :
Charge-Sheet Model Fitting to Extract Radiation-Induced Oxide and Interface Charge
Author :
Galloway, K.F. ; Wilson, C.L. ; Witte, L.C.
Author_Institution :
Semiconductor Electronics Division National Bureau of Standards Gaithersburg, MD 20899 and Electrical Engineering Department University of Maryland College Park, MD 20741
Abstract :
A method for extracting values of oxide and interface charge from the current-voltage (I-V) characteristics of long-channel MOSFETs is described. The one-dimensional charge-sheet model developed by Brews provides the basis for the I-V characteristics. The I-V characteristics given by this model are optimized with respect to a set of experimental data for an irradiated devrice with the flatband voltage and the mobility the only free parameters. Simple relationships between these parameters and the radiation-induced interface and oxide charge are assumed.
Keywords :
Annealing; Current measurement; Data mining; Degradation; Doping; Interface states; Ionizing radiation; MOSFETs; Semiconductor process modeling; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1985.4334142
