Field dependence of ionisation rates of electrons in silicon

A theoretical model for the ionisation coefficient of electrons in silicon has been developed based on the solution of the Boltzmann transport equation. Analytic expressions are obtained for the ionisation coefficient and the drift velocity. Modifications in the deformation potential constants have been suggested for obtaining a fit to the experimentally observed results for the drift velocity and ionisation coefficient. The mean free path for ionisation calculated with the help of this model fits well with the earlier predictions.