Title :
Active bipolar transistor solid-state crosspoints
Author :
Danneels, Johan M R ; Sansen, Willy M C
fDate :
6/1/1976 12:00:00 AM
Abstract :
The new principle of an active crosspoint for telecommunications traffic exchanges is explained. Its basic difference concerns the application of device gain to obtain more favorable on-state specifications. The realization of this principle has resulted in a stable circuit which is insensitive to transients and temperature variations. This circuit also provides good off-state specifications and broad-band frequency performance. Finally, the concept is such that large-scale integration (LSI) by means of conventional bipolar technology allows the fabrication of large and low-cost crosspoint arrays.
Keywords :
Active networks; Bipolar transistors; Electronic switching systems; Large scale integration; Monolithic integrated circuits; Semiconductor switches; Telephone switching equipment; active networks; bipolar transistors; electronic switching systems; large scale integration; monolithic integrated circuits; semiconductor switches; telephone switching equipment; Bipolar transistors; Circuit simulation; Conductors; Fabrication; Large scale integration; MESFETs; Production; Solid state circuits; Speech; Telecommunication traffic;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050742
