Title :
Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology
Author :
Chen, K.N. ; Fan, A. ; Tan, C.S. ; Reif, R.
Author_Institution :
Microsystems Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
A novel test structure for contact resistance measurement of bonded copper interconnects in three-dimensional integration technology is proposed and fabricated. This test structure requires a simple fabrication process and eliminates the possibility of measurement errors due to misalignment during bonding. Specific contact resistances of bonding interfaces with different interconnect sizes of approximately 10-8 Ω-cm2 are measured. A reduction in specific contact resistance is obtained by longer anneal time. The specific contact resistance of bonded interconnects with longer anneal time does not change with interconnect sizes.
Keywords :
contact resistance; copper; integrated circuit interconnections; integrated circuit modelling; 3-dimensional integration technology; anneal time; bonded copper interconnects; bonding interfaces; bonding-based misalignment; contact resistance measurement; contact resistances; measurement errors; test structure; Annealing; Contact resistance; Copper; Electrical resistance measurement; Fabrication; Integrated circuit interconnections; Kelvin; Measurement errors; Testing; Wafer bonding;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.821591
