DocumentCode :
882050
Title :
A model for radiation damage in metal-oxide-semiconductor structures
Author :
Grove, A.S. ; Snow, E.H.
Volume :
54
Issue :
6
fYear :
1966
fDate :
6/1/1966 12:00:00 AM
Firstpage :
894
Lastpage :
895
Keywords :
Anodes; Capacitance measurement; Charge carrier processes; Electron traps; Ionizing radiation; MOS capacitors; Silicon compounds; Snow; Tungsten; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.4910
Filename :
1446840
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=882050
