Band-to-band tunneling in vertically scaled SiGe:C HBTs

Author

Lagarde, D. ; Chevalier, P. ; Schwartzmann, T. ; Chantre, A.

Author_Institution

STMicroelectron., Crolles, France

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

275

Lastpage

277

Abstract

A nonideal base current component with negative differential resistance is observed at low injection on Gummel characteristics of high-speed SiGe:C bipolar transistors. The temperature dependence of this effect and the influence of emitter-base engineering on its magnitude are described. The results point to band-to-band tunneling in the emitter-base junction as the physical origin of this phenomenon.

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; high-speed techniques; negative resistance; semiconductor junctions; semiconductor materials; tunnelling; Gummel characteristics; SiGe-C; band-to-band tunneling; emitter-base junction; heterojunction bipolar transistor; high-speed bipolar transistors; negative differential resistance; temperature dependence; Automotive engineering; Bipolar transistors; CMOS technology; Current density; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave technology; Silicon germanium; Temperature dependence; Tunneling; Heterojunction bipolar transistor (HBT); SiGe; negative differential resistance; tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.871853

Filename

1610784