MOSFET drain engineering analysis for deep-submicrometer dimensions: a new structural approach

Author

Shin, Hyungsoon ; Tasch, A.F. ; Bordelon, T. James ; Maziar, Christine M.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1922

Lastpage

1927

Abstract

A new MOS transistor structural approach (hot-carrier-induced MOSFET) capable of substantially suppressing adverse hot-carrier effects, while maintaining the other desired performance and manufacturability characteristics of deep-submicrometer MOSFETs (L _gate⩽0.35 μm) is described. This structure is unique in having a lower doped N^- region located behind (or above) a very shallow, steeply profiled source/drain junction. In contrast, LDD types of MOSFETs have an N^- region with a more graded doping profile immediately adjacent to the channel region. The simulated characteristics of the HCS MOSFET structure indicate approximately one order of magnitude less substrate current in comparison to an LDD type of MOSFET whose structure and doping parameters are optimized for combined performance, reliability, and manufacturability. In terms of combined performance, reliability, and manufacturability, the HCS MOSFET should permit MOSFET devices to be more successfully scaled at deep-submicrometer dimensions

Keywords

digital simulation; doping profiles; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor technology; LDD structure; MOS transistor structural approach; MOSFET drain engineering analysis; deep-submicrometer dimensions; doping parameters; graded doping profile; hot carrier suppressed MOSFET; hot-carrier effects; hot-carrier-induced MOSFET; lightly doped drain structure; manufacturability characteristics; reliability; simulated characteristics; simulation model; substrate current; Degradation; Doping profiles; Hot carrier effects; Impact ionization; MOS devices; MOSFET circuits; Microelectronics; Pressing; Substrates; Virtual manufacturing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144685

Filename

144685