• DocumentCode
    882147
  • Title

    High-frequency response in carbon nanotube field-effect transistors

  • Author

    Frank, David J. ; Appenzeller, Joerg

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    25
  • Issue
    1
  • fYear
    2004
  • Firstpage
    34
  • Lastpage
    36
  • Abstract
    We report electrical measurements of the radio frequency response of carbon nanotube field-effect transistors (CNFETs). The very low current drive of CNFETs makes conventional high-frequency measurements difficult. To overcome this problem, we have used a novel approach to easily measure the response up to 250 MHz in nonoptimized experimental conditions. We observe a clear response of our CNFETs with no deterioration in signal up to at least 250 MHz, which is the limit for our present configuration.
  • Keywords
    carbon nanotubes; insulated gate field effect transistors; nanotechnology; 250 MHz; C; carbon nanotube; electrical measurements; field-effect transistors; high-frequency measurements; high-frequency response; radio frequency response; signal deterioration; very low current drive; CNTFETs; Carbon nanotubes; Current measurement; Dielectric substrates; Electric variables measurement; FETs; Frequency measurement; Frequency response; Radio frequency; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.821589
  • Filename
    1264106