Title :
Tunable dispersion properties of liquid crystal infiltrated into a two-dimensional photonic crystal
Author :
Alagappan, G. ; Sun, X.W. ; Yu, Ming Bin ; Shum, P. ; den Engelsen, Daniel
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
4/1/2006 12:00:00 AM
Abstract :
Tunable dispersion properties of liquid crystal (LC) infiltrated into a two-dimensional silicon photonic crystal (PC) are presented. For the analysis of refraction tuning, polarization splitting and superprism effect, we make use of the variations of the dispersion curves as a function of the orientation of the optic axis of the LC. In particular, we show that the light propagation angle in the PC becomes continuously tunable by reorienting the optic axis of the LC; at a certain incident angle an extreme sensitivity of the propagation angle as a function of the orientation of the optic axis of the LC occurs. Moreover, the splitting of the transverse magnetic and transverse electric polarizations of light is substantially larger than the splitting in a conventional bulk anisotropic medium. This splitting angle can also be well controlled by adjusting the optic axis orientation of the LC. Furthermore, the variation of optic axis orientation also modifies the sharp corners of the dispersion curve, which in turn gives an excellent control of the superprism effect in the PC.
Keywords :
elemental semiconductors; light polarisation; light refraction; liquid crystals; optical beam splitters; optical dispersion; optical prisms; optical tuning; photonic crystals; silicon; infiltration; light propagation angle; liquid crystal; optic axis orientation; polarization splitting; refraction tuning; superprism; tunable dispersion; two-dimensional silicon photonic crystal; Dispersion; Geometrical optics; Liquid crystals; Optical control; Optical polarization; Optical propagation; Optical refraction; Optical sensors; Photonic crystals; Silicon; Anisotropic; photonic crystal (PC); superprism; tunability;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.871070