Title :
Modeling of the low-frequency base resistance of single base contact bipolar transistors
Author_Institution :
Ruhr-Univ. Bochum, Germany
fDate :
8/1/1992 12:00:00 AM
Abstract :
The current and geometry dependence of the base resistance of single base contact (SBC) bipolar transistors is accurately modeled by extending the simple analytical formulas given by T. Ohzone et al. (1985). The results show that SBC transistors only seem to be useful if the ratio of emitter width b to emitter length l is larger than about 1/5. Of course, this limit depends on technology and circuit application
Keywords :
bipolar transistors; contact resistance; semiconductor device models; 2D transistor simulation; DEVICE; SBC transistors; analytical formulas; emitter length; emitter width; geometry dependence; low frequency base resistance modelling; single base contact bipolar transistors; Bipolar transistors; Circuits; Conductivity; Contact resistance; Current density; Geometry; Proximity effect; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
