Batch fabrication of integral-heat-sink IMPATT diodes

A new technique for IMPATT-diode fabrication is described, in which the critical portion of the diode heat-flow path is formed as an integral part of the diode. The technique has economic advantages over conventional methods in that all processing steps are performed while diodes are still in wafer form. In addition, the technique permits passivation using standard dielectric deposition techniques, and the diode geometrical shape is such as to suppress premature edge breakdown. Typical experimental results are shown.