Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz

Author

Plana, Robert ; Escotte, Laurent ; Llopis, Olivier ; Amine, Hicham ; Parra, Thierry ; Gayral, Michel ; Graffeuil, Jacques

Author_Institution

LAAS-CNRS, Univ. Paul Sabatier, Toulouse, France

Volume

40

Issue

5

fYear

1993

fDate

5/1/1993 12:00:00 AM

Firstpage

852

Lastpage

858

Abstract

Noise properties of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs (PHEMTs) have been investigated simultaneously in the low and intermediate frequency range (10 Hz to 150 MHz) and in the microwave range (4 to 18 GHz) and compared to the noise of more classical devices such as MESFETs and GaAlAs/GaAs HEMTs. Unlike the other commercially available devices, PHEMTs exhibit the unique capability of providing simultaneously state-of-the-art microwave noise performance and a reasonable low-frequency excess noise

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; random noise; semiconductor device noise; solid-state microwave devices; 10 Hz to 150 MHz; 4 to 18 GHz; AlGaAs-InGaAs-GaAs; low-frequency excess noise; microwave noise performance; microwave range; pseudomorphic HEMTs; Active noise reduction; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Low-frequency noise; Microwave devices; Noise figure; PHEMTs; Phase noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.210190

Filename

210190