Impact of programming mechanisms on the performance and reliability of nonvolatile memory devices based on Si nanocrystals

Author

Ng, C.Y. ; Chen, T.P. ; Yang, M. ; Yang, J.B. ; Ding, L. ; Li, C.M. ; Du, A. ; Trigg, A.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

53

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

663

Lastpage

667

Abstract

A nonvolatile memory based on silicon nanocrystals (nc-Si) synthesized with very-low-energy Si⁺ implantation is fabricated, and the memory performance under the programming/erasing of either Fowler-Nordheim (FN)/FN or channel hot electron (CHE)/FN at both room temperature and 85°C is investigated. The CHE programming has a larger memory window, a better endurance, and a longer retention time as compared to FN programming. In addition, the CHE programming yields less stress-induced leakage current than FN programming, suggesting that it produces less damage to the gate oxide and the oxide/Si interface. Detailed discussions on the impact of the programming mechanisms are presented.

Keywords

circuit reliability; elemental semiconductors; hot carriers; leakage currents; nanostructured materials; random-access storage; silicon; 85 C; Fowler-Nordheim programming; Si; channel hot electron programming; gate oxide damage; leakage current; nonvolatile memory devices; programming mechanisms; silicon nanocrystals; Biomedical engineering; Channel hot electron injection; Chemical technology; Leakage current; Nanocrystals; Nonvolatile memory; Programming profession; Silicon; Temperature; Tunneling; Channel-hot-electron (CHE) injection; Fowler–Nordheim (FN) injection; memory device; silicon nanocrystal (nc-Si);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.870281

Filename

1610893