Title :
Polarisation dependent interband optical absorption in strained nonsquare InGaAs/GaAs quantum well
Author :
Micallef, J. ; Li, E.H. ; Weiss, B.L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
fDate :
3/12/1992 12:00:00 AM
Abstract :
Results of the effects of an error-function compositional profile, which simulates the effects of disordering, in a strained quantum well structure on the polarisation dependent interband absorption coefficient are presented. Strain and disordering can be combined in quantum well structures to tailor the absorption edge to desired wavelengths.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared spectra of inorganic solids; light absorption; light polarisation; semiconductor quantum wells; 0.85 to 1 micron; InGaAs-GaAs strained quantum well; absorption edge; disordering; error-function compositional profile; interband optical absorption; polarisation dependence; strain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920332
