DocumentCode
884115
Title
Amplifier and Driver Circuits for Thin Film Memories with 15 Nanoseconds Read Cycle Time
Author
Seitzer, D.
Author_Institution
Research Lab., IBM Corporation, Ruschlikon ZH, Switzerland.
Issue
6
fYear
1964
Firstpage
722
Lastpage
729
Abstract
Amplifier and driver circuit design principles for an experimental 4608-bit nondestructive thin film memory with 13.5-nsec read and 60-nsec write cycle times are given. The bit noise problems inherent in the common bit sense line concept are solved by using tunnel diodes in a nonlinear balancing circuit. A further improvement of the signal-to-noise ratio is achieved by employing a noise resistant sense amplifier with nonlinear negative feedback. The word driver described is capable of delivering 700 ma pulse amplitude at 50 mc repetition rate at a pulse width of 7 nsec.
Keywords
Coaxial cables; Diodes; Driver circuits; Logic circuits; Propagation delay; Pulse amplifiers; Pulse width modulation inverters; Solid state circuits; Space vector pulse width modulation; Thin film circuits;
fLanguage
English
Journal_Title
Electronic Computers, IEEE Transactions on
Publisher
ieee
ISSN
0367-7508
Type
jour
DOI
10.1109/PGEC.1964.263906
Filename
4038304
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