Title :
Three-terminal CID as random access memory cell
Author :
Koch, R. ; Herbst, H. ; Jespers, P.
Abstract :
A method for electrical write-in via punchthrough is described, with which CIDs can be operated as memories. The principle has been successfully proven on a 3T-CID RAM. Estimated values achievable with an optimized device are presented.
Keywords :
Charge-coupled device circuits; Integrated memory circuits; Random-access storage; charge-coupled device circuits; integrated memory circuits; random-access storage; Bipolar transistor circuits; Costs; Electrodes; Electrons; Logic circuits; MOS capacitors; Random access memory; Read-write memory; Solid state circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1977.1050950
