• DocumentCode
    884394
  • Title

    MOVPE grown Ga0.6In0.4Sb photodiodes for 2.55 mu m detection

  • Author

    Pascal-Delannoy, F. ; Bouganot, J. ; Allogho, G.G. ; Giani, Annarita ; Gouskov, L. ; Bougnot, G.

  • Author_Institution
    Univ. de Montpellier Sci. et Tech. du Languedoc, France
  • Volume
    28
  • Issue
    6
  • fYear
    1992
  • fDate
    3/12/1992 12:00:00 AM
  • Firstpage
    531
  • Lastpage
    532
  • Abstract
    Photodiodes with a long-wavelength cutoff extending out of 2.9 mu m have been fabricated from MOVPE-grown Ga0.6In0.4Sb homojunctions. These mesa devices without any passivation or antireflecting coating exhibit a peak efficiency as high as 43% at 2.60 mu m.
  • Keywords
    III-V semiconductors; gallium compounds; indium antimonide; infrared detectors; photodiodes; semiconductor growth; vapour phase epitaxial growth; 2.55 to 2.9 micron; 43 percent; Ga 0.6In 0.4Sb photodiodes; GaSb substrate; IR detection; MOVPE growth; long-wavelength cutoff; mesa devices; peak efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920335
  • Filename
    126481
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=884394