Title :
High performance of induced-channel heterojunction field-effect transistor (HFET)
Author :
Mand, R.S. ; Eicher, S. ; SpringThorpe, A.J.
Author_Institution :
Bell Northern Res. Ltd., Ottawa, Ont., Canada
fDate :
3/6/1989 12:00:00 AM
Abstract :
AlGaAs/GaAs high-performance, minority-carrier, induced-channel, heterojunction field-effect transistors (HFETs) fabricated on semi-insulating GaAs using molecular beam epitaxy (MBE) are reported. A 0.6 mu m self-aligned gate HFET exhibited a room-temperature transconductance of 540 mS/mm with a cutoff frequency of 25 GHz.
Keywords :
III-V semiconductors; aluminium; field effect transistors; gallium arsenide; solid-state microwave devices; 0.6 micron; 20 to 25 C; 25 GHz; 540 mS/mm; AlGaAs-GaAs; HFETs; MBE; SHF; cutoff frequency; heterojunction field-effect transistors; induced-channel; minority-carrier; molecular beam epitaxy; room temperature characteristics; room-temperature transconductance; self-aligned gate HFET; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890266
