DocumentCode :
884716
Title :
On the RF Series Resistance Extraction of Nanoscale MOSFETs
Author :
Choi, Gil-Bok ; Hong, Seung-Ho ; Jung, Sung-Woo ; Jeong, Yoon-Ha
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang
Volume :
18
Issue :
10
fYear :
2008
Firstpage :
689
Lastpage :
691
Abstract :
A new extraction method of series resistance based on the radio frequency S-parameter measurement for sub -0.1 mum metal oxide semiconductor field-effect transistor is presented. The practical limit of conventional methods is analyzed from measurement and simulation. From this analysis, analytical expressions are derived, and linear regression techniques are used to extract the series resistances. The proposed method improves the accuracy and reduces the measurement frequency.
Keywords :
MOSFET; S-parameters; radiofrequency integrated circuits; regression analysis; RF series resistance extraction; linear regression techniques; metal oxide semiconductor field-effect transistor; nanoscale MOSFET; radio frequency S-parameter measurement; Electrical resistance measurement; FETs; Frequency measurement; Linear regression; MOSFETs; Nanomaterials; Optimization methods; Radio frequency; Scattering parameters; Semiconductor device noise; Extraction; metal oxide semiconductor field-effect transistor (MOSFET); modeling; radio frequency (RF); series resistance; small signal;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2008.2003472
Filename :
4639554
Link To Document :
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