Title :
Novel two-step SDB technology for high-performance thin-film SOI/MOSFET applications
Author :
Xu, X.L. ; Tong, Q.Y.
Author_Institution :
Nanjing Inst. of Technol., China
fDate :
3/6/1989 12:00:00 AM
Abstract :
A novel two-step oxided silicon wafer direct bonding process (TSDB) for fabricating high-quality SOI substrates is presented, which has no contamination, no complex thinning process and no subsurface damage. The fracture strength of the SOI/TSDB material is 180 kg/cm2. SOI/TSDB NMOS and PMOS devices (0.8-3 mu m) have shown that the typical values of electron and hole surface channel mobility are 680 and 320 cm2/Vs, respectively. A high device transconductance and high on-off current ratio have also been obtained.
Keywords :
VLSI; elemental semiconductors; insulated gate field effect transistors; semiconductor technology; semiconductor-insulator boundaries; silicon; 0.8 to 3 micron; Si wafer direct bonding; Si-SiO 2-Si bond; TSDB; device transconductance; electron mobility; fracture strength; high-quality SOI substrates; hole mobility; on-off current ratio; semiconductors; thin-film SOI/MOSFET applications; two-step SDB technology; wafer direct bonding process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890271
