Thin Silicon Film p-i-n Photodiodes with Internal Reflection

A new kind of silicon p-i-n photodiode is presented which combines broad wavelength response at high quantum efficiencies (450 to 900 nm ~85 percent) and extremely fast response time (typically below 100 ps). The diodes use internal light reflection. Theoretical expressions for different types of gratings are presented. The fabrication steps for both the different kinds of gratings and the diode itself are given. Experimental data of the time and wavelength response prove this expected excellent behavior.