DocumentCode
885235
Title
Characterization of an MOS sense amplifier
Author
Varshney, Ramesh C. ; Venkateswaran, K.
Volume
13
Issue
2
fYear
1978
fDate
4/1/1978 12:00:00 AM
Firstpage
268
Lastpage
271
Abstract
A novel technique to characterize MOS sense amplifiers is described. The technique does not perturb the operation of the sense amplifier during characterization. An MOS sense amplifier has been characterized using this technique for various power supply and clock conditions. The characterization results are given to demonstrate the sensitivity of the technique.
Keywords
Amplifiers; Field effect integrated circuits; Integrated memory circuits; amplifiers; field effect integrated circuits; integrated memory circuits; Capacitance measurement; Circuits; Fabrication; Gallium arsenide; Intrusion detection; Parasitic capacitance; Performance evaluation; Power amplifiers; Power generation; Roentgenium;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051032
Filename
1051032
Link To Document