• DocumentCode
    885486
  • Title

    A new SCCD specific measurement technique to determine the effective fast interface state density

  • Author

    Klar, Heinrich ; Mauthe, Manfred ; Pfleiderer, Hans-JÖrg

  • Volume
    13
  • Issue
    3
  • fYear
    1978
  • fDate
    6/1/1978 12:00:00 AM
  • Firstpage
    366
  • Lastpage
    368
  • Abstract
    Taking into account the thermally generated minority carriers to determine the background charge level along a SCCD, a measurement technique is described to obtain an effective fast interface state density N/SUB SSeff/. Compared to other SCCD specific methods the authors achieve better accuracy. The measurement technique is simple to apply and is useful to determine very small values of N/SUB SSeff/.
  • Keywords
    Charge-coupled devices; Interface electron states; charge-coupled devices; interface electron states; Charge transfer; Computer interfaces; Electrodes; Electron traps; Frequency; Interface states; Measurement techniques; Performance loss; Tellurium; Testing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1978.1051055
  • Filename
    1051055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=885486