• DocumentCode
    885647
  • Title

    Elimination of intervalence band absorption in compressively strained InGaAs/InP 1.5 mu m MQW lasers observed by hydrostatic pressure measurements

  • Author

    Ring, W.S. ; Adams, A.R. ; Thijs, P.J.A.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • Volume
    28
  • Issue
    6
  • fYear
    1992
  • fDate
    3/12/1992 12:00:00 AM
  • Firstpage
    569
  • Lastpage
    570
  • Abstract
    Hydrostatic pressure was applied to 1.5 mu m buried heterostructure In0.8Ga0.2As/InP (1.8% strain) lasers. In contrast to bulk and unstrained MQW devices, no increase in quantum differential efficiency was observed indicating negligible intervalence band absorption. The pressure and temperature variation of the threshold current was explained assuming Auger recombination and a reduced hole mass.
  • Keywords
    Auger effect; III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; 1.5 micron; Auger recombination; In 0.8Ga 0.2As-InP; MQW lasers; absorption elimination; buried heterostructure; compressively strained; hole mass-reduction; hydrostatic pressure measurements; intervalence band absorption; pressure variation; quantum differential efficiency; semiconductor lasers; temperature variation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19920359
  • Filename
    126504
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=885647