Abstract :
Recent progress in high-power semiconductor lasers for erbium-doped fiber amplifiers is described, focusing on 1.48-μm InGaAsP/InP lasers and 0.98-μm InGaAs/GaAs lasers. The experimental output powers exceed 200 mW (the maximum power was 325 mW) for 1.48-μm lasers, and simulation results indicate that over 400 mW could be obtained by optimizing parameters in strained-layer (SL) multiple-quantum-well (MQW) lasers. Stable operation over a few thousand hours under 100-mW power is demonstrated for liquid-phase-epitaxy-grown lasers, MQW lasers, and SL-MQW lasers grown by all-metal organic vapor-phase epitaxy (MOVPE). For 0.98-μm lasers, improvement in the fiber coupling efficiencies and long-term reliabilities are described. Their power coupled into a single-mode fiber has reached over 100 mW, with coupling efficiencies of approximately 40%. Although reliability seems to be one of the drawbacks compared with 1.48-μm lasers, stable operation for over 10,000 h at 50°C and 30 mW has been reported
Keywords :
ageing; optical communication equipment; optical pumping; optical testing; reliability; semiconductor device testing; semiconductor lasers; 0.98 micron; 1.48 micron; 100 mW; 10000 hrs; 200 mW; 30 mW; 325 mW; 40 percent; 400 mW; 50 degC; Er-doped fibre amplifiers; IR; InGaAs-GaAs; InGaAsP-InP; LPE growth; MOVPE; MQW lasers; all-metal organic vapor-phase epitaxy; erbium-doped fiber amplifiers; fiber coupling efficiencies; high-power semiconductor lasers; liquid-phase-epitaxy-grown lasers; long-term reliabilities; maximum power; multiple-quantum-well; output powers; single-mode fiber; stable operation; strained-layer; Epitaxial growth; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Indium phosphide; Laser excitation; Laser stability; Power lasers; Pump lasers; Quantum well devices; Semiconductor lasers;
