Temperature model for current gain of tunnelling field-induced junction transistors

A temperature model for the current gain of tunnelling field-induced junction transistors (TFIJTs) is presented. It is shown that current gain may have both a positive and negative coefficient, which is related to the base doping concentration and applied voltage. Because of the heavy doping, the energy gap narrowing effect and the carrier Fermi-Dirac statistics distribution are taken into account. On this basis, a novel transistor with temperature-stable current gain is successfully designed.