Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs

Author

Shiu, Jin-Yu ; Huang, Jui-Chien ; Desmaris, Vincent ; Chang, Chia-Ta ; Lu, Chung-Yu ; Kumakura, Kazuhide ; Makimoto, Toshiki ; Zirath, Herbert ; Rorsman, Niklas ; Chang, Edward Yi

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

Volume

28

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

476

Lastpage

478

Abstract

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high- power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at V_gs = -4 V and V_ds = 50 V and a maximum power added efficiency of 51.5% at V_gs = -4 V and V_ds = 30 V at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; ion implantation; AlGaN-GaN; frequency 3 GHz; gate leakage; high-power microwave high electron mobility transistors; oxygen ion implantation isolation planar process; planar HEMT; voltage -4 V; voltage 30 V; voltage 50 V; Aluminum gallium nitride; Gallium nitride; Gate leakage; HEMTs; Helium; Ion implantation; Laboratories; MODFETs; Materials science and technology; Oxygen; GaN; high electron mobility transistors (HEMTs); implantation; power density; pulsed $I$ –$V$; transient;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.896904

Filename

4212189