DocumentCode
886147
Title
A charge-oriented model for MOS transistor capacitances
Author
Ward, Donald E. ; Dutton, Robert W.
Volume
13
Issue
5
fYear
1978
Firstpage
703
Lastpage
708
Abstract
A new model for computer simulation of capacitance effects in MOS transistors is presented. Transient currents are found directly from the charge distribution in the device rather than from capacitances. The effective capacitances which result are nonreciprocal. The model guarantees conservation of charge and includes bulk capacitances. Several circuit examples are considered.
Keywords
Capacitance; Digital simulation; Insulated gate field effect transistors; Semiconductor device models; capacitance; digital simulation; insulated gate field effect transistors; semiconductor device models; Capacitance; Capacitors; Charge coupled devices; Computer simulation; Integrated circuit technology; Large scale integration; MOSFETs; Solid modeling; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051123
Filename
1051123
Link To Document