InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency

Strained-layer InGaAs/GaAs/GaInP separated confinement heterostructure single quantum-well (SCH-SQW) lasers have been fabricated. These lasers exhibit a low threshold current density of 72 A/cm², a high internal quantum efficiency of 90%, and a low internal waveguide loss of 8.8 cm^-1. The transparency current density and gain coefficient are 29 A cm^-2 and 0.046 cm mu m A^-1, respectively. The characteristic temperature is between 120 and 140 K. These results obtained for InGaAs/GaAs/GaInP lasers are comparable to the best results for InGaAs/GaAs/AlGaAs lasers.