Title :
Transistor noise model for photodetector amplifiers
fDate :
10/1/1978 12:00:00 AM
Abstract :
A simplified transistor noise model valid for field-effect and bipolar transistors is introduced. The model is used to derive expressions for the equivalent noise current in transimpedance amplifiers employed in fiber optic receivers. Experimental data are presented supporting the theoretical calculations. Criteria for optimal biasing of field-effect and bipolar transistors are also presented.
Keywords :
Amplifiers; Bipolar transistors; Electron device noise; Field effect transistors; Photodetectors; Semiconductor device models; amplifiers; bipolar transistors; electron device noise; field effect transistors; photodetectors; semiconductor device models; Bipolar transistors; Circuit noise; Equivalent circuits; FETs; Frequency; Noise generators; Optical amplifiers; Optical fiber amplifiers; Optical noise; Photodetectors;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1978.1051127
