DocumentCode :
886197
Title :
Charge Collection by Drift during Single Particle Upset
Author :
Shur, Michael ; Lee, Kang ; Choe, Robert ; Berger, Erik
Author_Institution :
Department of Electrical Engineering University of Minnesota, Minneapolis MN 55455
Volume :
33
Issue :
5
fYear :
1986
Firstpage :
1140
Lastpage :
1146
Abstract :
An improved analytical model for the drift charge collection during a single particle upset is developed. The model is based on the assumption that initially the plasma column created by an energetic particle is spread by the ambipolar diffusion. Then the collection occurs via the ambipolar drift process at the outer radius of the plasma column where the plasma density drops to a value comparable to the substrate doping. In agreement with experimental data the model predicts that the collected charge increases with the decrease in the substrate doping. A good fit to experimental data for beryllium, oxygen and copper ions is obtained for Si n+p and p+n samples.
Keywords :
Analytical models; Doping; Electron mobility; Nonuniform electric fields; Plasma density; Plasma properties; Plasma simulation; Plasma temperature; Semiconductor process modeling; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1986.4334553
Filename :
4334553
Link To Document :
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