• DocumentCode
    886441
  • Title

    Dose Calculations for Si-SiO2Si Layered Structures Irradiated by X Rays and 60Co Gamma Rays

  • Author

    Hamm, R. N.

  • Author_Institution
    Health and Safety Research Division Oak Ridge National Laboratory Oak Ridge, Tennessee 37831-6123
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1235
  • Lastpage
    1239
  • Abstract
    A Monte Carlo calculation of dose deposition in a layered Si-SiO2-Si structure is described. Results are given for dose distributions for 250-, 500-, and 5000-Ã… SiO2 thicknesses and for irradiation by 8-keV x rays and 60Co gamma rays. Spatial distributions of holes in the 500-Ã… SiO2 layer are presented.
  • Keywords
    Atomic measurements; Charge carrier processes; Electrons; Gamma rays; Health and safety; Laboratories; MOS devices; Monte Carlo methods; Stochastic processes; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334584
  • Filename
    4334584
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886441