Title :
Process modeling and design procedure for IGFET thresholds
Author :
Geipel, Henry J., Jr. ; Fortino, Andres G.
fDate :
4/1/1979 12:00:00 AM
Abstract :
An empirically based process modelling system is discussed for determining ion-implant conditions used to achieve specific IGFET thresholds. Experimental techniques are applied to insure consistency between physical process phenomenon and the numerical algorithms employed. Device threshold design results are presented for active and parasitic IGFETs in a dual polysilicon-gate technology. The utility of this design procedure in multistep processes for determining the effects of various parameters such as screen thickness, final peak concentration, dose, and energy are considered.
Keywords :
Insulated gate field effect transistors; Semiconductor device models; insulated gate field effect transistors; semiconductor device models; FETs; Fabrication; Heating; Implants; Numerical models; Predictive models; Process design; Semiconductor impurities; Semiconductor process modeling; Substrates;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1979.1051194
