Title :
Multigigahertz voltage-controlled oscillators in advanced silicon bipolar technology
Author :
Soyuer, Mehmet ; Warnock, James D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
4/1/1992 12:00:00 AM
Abstract :
Relaxation-type monolithic silicon bipolar voltage-controlled oscillators (VCOs) with center frequencies ranging from 1.5 to 5 GHz are described. The maximum oscillating frequency achieved is 7.4 GHz. The VCOs dissipate about 70 mW from a 3.6-V supply, including the output buffer and voltage-to-current converter stages. Two types of on-chip timing capacitor structure and various configurations used in achieving these results are described. A wide tuning range sufficient for covering the normal process tolerances and supply variations expected in a practical environment was achieved. The circuits were fabricated in an advanced 0.8-μm double-poly self-aligned bipolar technology
Keywords :
MMIC; bipolar integrated circuits; elemental semiconductors; microwave oscillators; relaxation oscillators; silicon; tuning; variable-frequency oscillators; 0.8 micron; 1.5 to 7.4 GHz; 3.6 V; 70 mW; MMIC; SHF; Si bipolar technology; UHF; VFO; double-poly; multigigahertz VCO; on-chip timing capacitor structure; output buffer; self-aligned bipolar technology; voltage-controlled oscillators; wide tuning range; Capacitors; Circuits; Clocks; Frequency estimation; Phase locked loops; Silicon; Timing; Tuning; Voltage; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of